BD678晶体管资料

  • BD678(A)别名:BD678(A)三极管、BD678(A)晶体管、BD678(A)晶体三极管

  • BD678(A)生产厂家:德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯

  • BD678(A)制作材料:Si-P+Darl+Di

  • BD678(A)性质:低频或音频放大 (LF)_功率放大 (L)

  • BD678(A)封装形式:直插封装

  • BD678(A)极限工作电压:60V

  • BD678(A)最大电流允许值:4A

  • BD678(A)最大工作频率:>10MHZ

  • BD678(A)引脚数:3

  • BD678(A)最大耗散功率:40W

  • BD678(A)放大倍数:β>750

  • BD678(A)图片代号:B-21

  • BD678(A)vtest:60

  • BD678(A)htest:10000100

  • BD678(A)atest:4

  • BD678(A)wtest:40

  • BD678(A)代换 BD678(A)用什么型号代替:BD262,BD778,FC50B,2N6035,

BD678价格

参考价格:¥0.9582

型号:BD678 品牌:STMicroelectronics 备注:这里有BD678多少钱,2024年最近7天走势,今日出价,今日竞价,BD678批发/采购报价,BD678行情走势销售排行榜,BD678报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD678

PlasticMedium-PowerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD

MotorolaMotorola, Inc

摩托罗拉

Motorola
BD678

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD678

NPNSILICONDARLINGTONTRANSISTORS

PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W)

SIEMENS

Siemens Ltd

SIEMENS
BD678

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD678

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

TEL

TRANSYS Electronics Limited

TEL
BD678

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD678

SiliconPNPDarligtonPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
BD678

PNPSILICONDARLINGTONTRANSISTORS

PNPSiliconDarlingtonTransistors Epibasepowerdarlingtontransistors(40W)

SIEMENS

Siemens Ltd

SIEMENS
BD678

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

Comset Semiconductor

COMSET
BD678

SiliconPNPDarligtonPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675/BD677/BD679 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
BD678

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

CDIL

CDIL

CDIL
BD678

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

Comset Semiconductor

COMSET
BD678

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD678

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD678

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
BD678

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
BD678

封装/外壳:TO-225AA,TO-126-3 包装:带盒(TB) 描述:TRANS PNP DARL 60V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683 BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

CDIL

CDIL

CDIL

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS TheBD676/A-BD678/A-BD680/A-BD682/AarePNPtransistorsmountedinJedecTO-126plasticpackage. Theyareeptaxial-basetransistorsinmonolithicDarlingtoncircuitforaudioandvideoapplications. NPNcomplementsareBD675/A-BD677/A-BD679/A-BD681/A Compli

COMSET

Comset Semiconductor

COMSET

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeBD675A/677A/679A/681 •DARLINGTON •HighDCcurrentgain APPLICATIONS •Formediumpowerlinearandswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC

ComplementarypowerDarlingtontransistors

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNPDARLIGNTONPOWERSILICONTRANSISTORS

PNPDARLIGNTONPOWERSILICONTRANSISTORS ForUseAsOutputDevicesInComplementaryGeneralPurposeAmplifierApplications. COMPLEMENTARYTOBD675,675A,677,677A,679,679A,681&683BD678,678A,680,680AAREEQUIVALENTTOMJE700,702,703.

TEL

TRANSYS Electronics Limited

TEL

MediumPowerLinearandSwitchingApplications

MediumPowerLinearandSwitchingApplications •MediumPowerDarlingtonTR •ComplementtoBD675A,BD677A,BD679AandBD681respectively

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticMedium-PowerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons ...foruseasoutputdevicesincomplementarygeneral–purposeamplifierapplications. •HighDCCurrentGain— hFE=750(Min)@IC=1.5and2.0Adc •MonolithicConstruction •BD676,676A,678,678A,680,680A,682arecomplementarywithBD

MotorolaMotorola, Inc

摩托罗拉

Motorola

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description ThedevicesaremanufacturedinplanarbaseislandtechnologywithmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Applications ■Line

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticMedium?뭁owerSiliconPNPDarlingtons

PlasticMedium−PowerSiliconPNPDarlingtons Thisseriesofplastic,medium−powersiliconPNPDarlingtontransistorscanbeusedasoutputdevicesincomplementarygeneral−purposeamplifierapplications. Features •HighDCCurrentGain−hFE=750(Min)@IC=1.5and2.0Adc •MonolithicCons

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

For3-phaseDCBrushlessMotorLevelShifter

文件:1.04872 Mbytes Page:20 Pages

ROHMRohm Semiconductor

罗姆罗姆半导体集团

ROHM

MediumPowerLinearandSwitching

文件:153 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

文件:252.33 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PlasticMedium-PowerSiliconPNPDarlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconPNPDarlingtonPowerTransistor

文件:188.95 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PlasticMedium-PowerSiliconPNPDarlingtons

文件:87.44 Kbytes Page:4 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

RECTIFIERSASSEMBLIES

ThreePhaseBridgeStandard&FastRecovery ●Currentratingsto25A ●VRRMto600V ●Onlyfused-in-glassdiodesused ●150°Cjunctiontemperature ●Surgeratingto150A ●Recoverytimesto500nS ●ElectricallyisolatedAluminumcase ●Controlledavalanchecharacteristics ●MIL-PRF-19

MicrosemiMicrosemi Corporation

美高森美美高森美公司

Microsemi

AluminumCapacitors105°C,Miniature,RadialLead

FEATURES •ImprovedSMPSoutputcapacitors •Highestripplecurrentratingspercasesize •HighCV •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay

4-STAGERETARDCONTROL

文件:125.89 Kbytes Page:4 Pages

MALLORY

Mallory Sonalert Products Inc.

MALLORY

횠16.0mmmountingBlackanodisedaluminiumhousing

文件:405.69 Kbytes Page:4 Pages

MARL

Marl International Ltd

MARL

AluminumCapacitors105°C,Miniature,RadialLead

文件:105.48 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Vishay

BD678产品属性

  • 类型

    描述

  • 型号

    BD678

  • 功能描述

    达林顿晶体管 DARLINGTON TRAN

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-6-3 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
2020+
TO-126
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
ST
22+
TO-126
30000
原装正品
ST/意法半导体
2023
SOT-32
6000
公司原装现货/支持实单
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
ST/意法半导体
21+
SOT-32
12820
公司只做原装,诚信经营
ROHM(罗姆)
23+
VQFN032V5050
6000
诚信服务,绝对原装原盘
ST/STMicroelectronics/意法半导
21+
TO-126
4224
优势代理渠道,原装正品,可全系列订货开增值税票
STM
2339+
N/A
21322
公司原厂原装现货假一罚十!特价出售!强势库存!
fsc
dc1013
原厂封装
5900
INSTOCK:250/bulk/ito
STM
21+
N/A
3450
深圳通

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