BD678晶体管资料
BD678(A)别名：BD678(A)三极管、BD678(A)晶体管、BD678(A)晶体三极管
BD678(A)生产厂家：德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯
BD678(A)制作材料：Si-P+Darl+Di
BD678(A)性质：低频或音频放大 （LF）_功率放大 （L）
BD678(A)封装形式：直插封装
BD678(A)极限工作电压：60V
BD678(A)最大电流允许值：4A
BD678(A)最大工作频率：>10MHZ
BD678(A)引脚数：3
BD678(A)最大耗散功率：40W
BD678(A)放大倍数：β>750
BD678(A)图片代号：B-21
BD678(A)vtest：60
BD678(A)htest：10000100
- BD678(A)atest：4
BD678(A)wtest：40
BD678(A)代换 BD678(A)用什么型号代替：BD262,BD778,FC50B,2N6035,
BD678价格
参考价格：￥0.9582
型号：BD678 品牌：STMicroelectronics 备注：这里有BD678多少钱，2026年最近7天走势，今日出价，今日竞价，BD678批发/采购报价，BD678行情走势销售排行榜，BD678报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD678 | Plastic Medium?뭁ower Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons | ONSEMI 安森美半导体 |   | |
BD678 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. | CDIL | | |
BD678 | Plastic Medium-Power Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD | MOTOROLA 摩托罗拉 | | |
BD678 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET | | |
BD678 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET | | |
BD678 | Silicon PNP Darligton Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications | ISC 无锡固电 | | |
BD678 | Silicon PNP Darligton Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications | SAVANTIC | | |
BD678 | NPN SILICON DARLINGTON TRANSISTORS PNP Silicon Darlington Transistors Epibase power darlington transistors (40W) | SIEMENS 西门子 | | |
BD678 | PNP SILICON DARLINGTON TRANSISTORS PNP Silicon Darlington Transistors Epibase power darlington transistors (40W) | SIEMENS 西门子 | | |
BD678 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD678 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD678 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD678 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD678 | PNP DARLIGNTON POWER SILICON TRANSISTORS PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. | TEL | | |
BD678 | 4.0 A，60 V，PNP 达林顿双极功率晶体管 This series of plastic, medium-powerPNP Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. • High DC Current Gain - hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681\n• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | | |
BD678 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：252.33 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
BD678 | 封装/外壳：TO-225AA，TO-126-3 包装：带盒（TB） 描述：TRANS PNP DARL 60V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
BD678 | Trans Darlington PNP 60V 4A 3-Pin TO-126 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD678 | Transistor | COMSET | | |
BD678 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
丝印代码：BD67870；4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ ( | ROHM 罗姆 | | ||
丝印代码：BD67871；TriC3TM 4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Innovation Active Gate Drive (TriC3TM) Multi Level Gate Drive Current Control Real Time Gate Current Control Based on Information Sensed from the Output State Dead Time Adjustment Control ◼ 60 V Three-phase Brushless DC Motor Gate Driver Wide 4.5 V to 60 V Input Voltage Range | ROHM 罗姆 | | ||
丝印代码：BD67872；4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ ( | ROHM 罗姆 | | ||
4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ ( | ROHM 罗姆 | | ||
TriC3TM 4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Innovation Active Gate Drive (TriC3TM) Multi Level Gate Drive Current Control Real Time Gate Current Control Based on Information Sensed from the Output State Dead Time Adjustment Control ◼ 60 V Three-phase Brushless DC Motor Gate Driver Wide 4.5 V to 60 V Input Voltage Range | ROHM 罗姆 | | ||
4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ ( | ROHM 罗姆 | | ||
Plastic Medium-Power Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD | MOTOROLA 摩托罗拉 | | ||
PNP DARLIGNTON POWER SILICON TRANSISTORS PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. | CDIL | | ||
Plastic Medium?뭁ower Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons | ONSEMI 安森美半导体 | | ||
Medium Power Linear and Switching Applications Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively | FAIRCHILD 仙童半导体 | | ||
SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli | COMSET | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications | ISC 无锡固电 | | ||
Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
PNP DARLIGNTON POWER SILICON TRANSISTORS PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703. | TEL | | ||
Plastic Medium?뭁ower Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons | ONSEMI 安森美半导体 | | ||
Plastic Medium?뭁ower Silicon PNP Darlingtons Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons | ONSEMI 安森美半导体 | | ||
丝印代码：D67891；For 3-phase DC Brushless Motor Level Shifter 文件：1.04872 Mbytes Page：20 Pages | ROHM 罗姆 | | ||
Medium Power Linear and Switching 文件：153 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：252.33 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
isc Silicon PNP Darlington Power Transistor 文件：188.95 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Plastic Medium-Power Silicon PNP Darlingtons 文件：87.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Plastic Medium-Power Silicon PNP Darlingtons 文件：87.44 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
FAST RECOVERY DIODE FAST RECOVERY DIODE Repetitive voltage up to 4500 V Mean forward current 1690 A Surge current 27 kA | POSEICO | |
BD678产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
PNP
- Collector-Emitter Voltage_max(V)：
60
- Collector-Base Voltage_max(V)：
60
- Collector Current_abs_max(A)：
4
- Dc Current Gain_min：
750
- Test Condition for hFE (IC)：
1.5
- Test Condition for hFE (VCE)_spec(V)：
3
- VCE(sat)_max(V)：
2.5
- Test Condition for VCE(sat) - IC：
1.5
- Test Condition for VCE(sat) - IB_spec(mA)：
30
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
25+ |
TSSOP24 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ON |
23+ |
TO-126 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
FAI |
24+ |
1000 |
|||||
STM |
24+ |
N/A |
21322 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST(意法半导体) |
24+ |
SOT-32 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
HITACHI |
2023+ |
TSSOP-24P |
53500 |
正品,原装现货 |
|||
ST/ON |
24+ |
TO-126 |
8900 |
全新原装现货,假一罚十 |
|||
ON |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
ROHM |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
BD678芯片相关品牌
BD678规格书下载地址
BD678参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
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- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BD709
- BD708
- BD707
- BD706
- BD705
- BD702
- BD701
- BD700(A)
- BD699(A)
- BD698(A)
- BD697(A)
- BD696(A)
- BD695(A)
- BD684
- BD683
- BD682T
- BD682G
- BD682A
- BD682
- BD681G
- BD681A
- BD681
- BD680G
- BD680CT
- BD680CS
- BD680AG
- BD680A
- BD680(A)
- BD680
- BD679G
- BD679AG
- BD679A
- BD679(A)
- BD679
- BD678G
- BD678AG
- BD678A
- BD678(A)
- BD677G
- BD677AS
- BD677AG
- BD677A
- BD677(A)
- BD677
- BD676G
- BD676AG
- BD676A
- BD676(A)
- BD676
- BD675G
- BD675AS
- BD675AG
- BD675A
- BD675(A)
- BD675
- BD6701F
- BD670
- BD664(A,B)
- BD663(A,B)
- BD662K
- BD662
- BD661K
- BD661
- BD660CT
- BD660CS
- BD6551G
- BD6550G
- BD652F
- BD652
- BD651F
- BD651
- BD650F
- BD650
- BD649F
- BD649
- BD648F
- BD648
- BD647F
BD678数据表相关新闻
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2013-3-5
DdatasheetPDF页码索引
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