Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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封装/外壳：TO-225AA，TO-126-3 包装：带盒（TB） 描述：TRANS PNP DARL 60V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington PNP 60V 4A 3-Pin TO-126

Transistor

4.0 A，60 V，PNP 达林顿双极功率晶体管

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

4.5 V to 60 V, Three-phase Brushless DC Motor Gate Driver

Features ◼ Wide 4.5 V to 60 V Input Voltage Range ◼ Bootstrap Gate Driver with Current Source Circuit for 100 % Duty Cycle Operation and High-impedance (Hi- Z) State with Trickle Charge Pump ◼ Super Low IVCCQ (

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

For 3-phase DC Brushless Motor Level Shifter

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Medium Power Linear and Switching

文件：153 Kbytes Page：6 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：252.33 Kbytes Page：6 Pages

isc Silicon PNP Darlington Power Transistor

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Plastic Medium-Power Silicon PNP Darlingtons

文件：87.44 Kbytes Page：4 Pages

Plastic Medium-Power Silicon PNP Darlingtons

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RECTIFIERS ASSEMBLIES

Three Phase Bridge Standard & Fast Recovery ● Current ratings to 25A ● VRRM to 600V ● Only fused-in-glass diodes used ● 150°C junction temperature ● Surge rating to 150A ● Recovery times to 500nS ● Electrically isolated Aluminum case ● Controlled avalanche characteristics ● MIL-PRF-19

Aluminum Capacitors 105 °C, Miniature, Radial Lead

FEATURES • Improved SMPS output capacitors • Highest ripple current ratings per case size • High CV • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

4-STAGE RETARD CONTROL

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횠16.0mm mounting Black anodised aluminium housing

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Aluminum Capacitors 105 °C, Miniature, Radial Lead

文件：105.48 Kbytes Page：6 Pages