霍尔感应芯片

The UTC H654 is integrated Hall sensors with  omplementary output drivers designed for electronic commutation of brushless DC Fan. It composed of an on-chip Hall voltage generator, a differentialamplifier, Schmitt trigger, an open-collector output on a single chip.Furthermore, an internal bandgap re • Operate from 3.5V ~ 20V supply voltage.\n• High output sinking capability up to 300mA for driving large load.\n• Build-in protecting diode for chip reversal power connecting.(Note1);

LINEAR INTEGRATED CIRCUIT

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COMPLEMENTARY OUTPUT HALL EFFECT LATCH

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COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes Page：5 Pages

COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes Page：5 Pages

COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes Page：5 Pages

COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes Page：5 Pages

COMPLEMENTARY OUTPUT HALL EFFECT LATCH

文件：125.99 Kbytes Page：5 Pages

LINEAR INTEGRATED CIRCUIT

文件：185.12 Kbytes Page：5 Pages

Low Cost Monolithic Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD654 is a monolithic V/F converter consisting of an input amplifier, a precision oscillator system, and a high current output stage. A single RC network is all that is required to set up any full scale (FS) frequency up to 500 kHz and any FS input voltage up to ± 30 V.

P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt