P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

P 沟道，PowerTrench® MOSFET，逻辑电平，-30V，-3.6A，75mΩ

此P沟道逻辑电平MOSFET采用飞兆高级PowerTrench工艺生产。 它已针对电池的电源管理应用进行了优化。 •-3.6 A，-30 V\n•RDS(ON) = 75 mΩ @ VGS = 10 V\n•RDS(ON) = 125 mΩ @ VGS = -4.5 V\n•低栅极电荷（6.2nC，典型值）\n•高性能沟道技术可实现极低的rDS(on);

Low Cost Monolithic Voltage-to-Frequency Converter

PRODUCT DESCRIPTION The AD654 is a monolithic V/F converter consisting of an input amplifier, a precision oscillator system, and a high current output stage. A single RC network is all that is required to set up any full scale (FS) frequency up to 500 kHz and any FS input voltage up to ± 30 V.

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 15 W Minimum Gain = 7.8 dB Efficiency = 55

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt