丝印代码：H6050S；P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

丝印代码：H6050SD；175°C 60V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Rated to +175°C – ideal for high ambient temperature environments 100 Unclamped Inductive Switching – ensures more reliable and robust end application Low RDS(ON) – minimises power losses Low Qg – minimises switching losses Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Ha

包装：散装 描述：TERM BLK 5POS SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

包装：散装 描述：TERM BLK 5POS SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

SWITCHING DIODE

Switching Diode

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

High-speed diode

DESCRIPTION The PMBD6050 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small SOT23 plastic SMD package. FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 70 V • Repetitive peak reverse voltage:

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Silicon Switching Diode

Silicon Switching Diode ● For high-speed switching applications