NPN EPITAXIAL PLANAR TRANSISTOR

Description The H2N4401 is designed for general purpose switching and amplifier applications. Features • Complementary to H2N4403 • High Power Dissipation : 625 mW at 25°C • High DC Current Gain : 100-300 at 150mA • High Breakdown Voltage : 40 V Min.

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Industrial and consumer switching applications.

NPN EXPITAXIAL SILICON TRANSISTOR

General Purpose Transistor Collector Emitter Voltage: VCEO = 40V Collector Dissiption: Pc(max) = 625mW

NPN Medium Power Transistor

• Features 1) BVCEO>40V (IC=1mA) 2) Complements the UMT4403 / SST4403 / MMST4403 / PN4403.

NPN General Purpose Amplifier

This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

SMALL SIGNAL TRANSISTORS NPN

FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor 2N4403 is recommended. ♦ On special request, this transistor is also manufactured in the pin configuration TO-18. ♦ This transistor is also available