PNP EPITAXIAL PLANAR TRANSISTOR

Description The H2N3906 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................. -55 ~ +150 °C Junction Temperature...........................

TO-92 Bipolar Transistor

PNP switching transistor

DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. FEATURES 1. Low current (max. 200 mA) 2. Low voltage (max. 40 V). APPLICATIONS 1. High-speed switching in industrial applications.

PNP SMALL SIGNAL TRANSISTOR

PNP General Purpose Transistor

Features 1) BVCEO>−40V (IC=−1mA) 2) Complements the UMT3904 / SST3904 / MMST3909 / 2N3904.

NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications?

PNP General Purpose Amplifier

Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA.