500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

128Mb (2M×4Bank×16) Synchronous DRAM

The H2A11281636B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 2Mega words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.\nThe 128Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is \n• Fully Synchronous to Positive Clock Edge\n• Single 3.3V ±0.3V Power Supply\n• LVTTL Compatible with Multiplexed Address\n• Programmable Burst Length (B/L) - 1, 2, 4, 8 or Full Page\n• Programmable CAS Latency (C/L) - 2 or 3\n• Data Mask (DQM) for Read / Write Masking\n• Programmable Wrap Sequenc;

SDRAM

SDRAM

IR High Power single chip LED

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IR High Power single chip LED

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High Power single chip LED

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High Power single chip LED

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High Power single chip LED

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IR High Power single chip LED

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IR High Power single chip LED

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High Power single chip LED

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High Power single chip LED

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High Power single chip LED

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Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.

MEDIUM CURRENT SILICON RECTIFIERS

[EDAL]

Silicon NPN epitaxial planar transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)

050 PIN HEADERS

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Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

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