| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H20R120 | Reverse Conducting IGBT with monolithic body diode Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high rugg | Infineon 英飞凌 |   | |
Reverse Conducting IGBT with monolithic body diode Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, te | Infineon 英飞凌 | | ||
Reverse conducting IGBT with monolithic body diode 1. Powerful monolithic body diode with low forward voltage designed for soft commutation only 2. Low EMI 3. Qualified according to JESD-022 for target applications 4. Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华晶/KEDA |
2011 |
TO-247 |
30000 |
全新原装进口自己库存优势 |
|||
INFINEON/英飞凌 |
24+ |
NA/ |
15638 |
原装现货,当天可交货,原型号开票 |
|||
INRINEON |
24+ |
TO3P |
160546 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
18+ |
TO-247 |
67 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
TO-247 |
45000 |
INFINEON/英飞凌全新现货H20R1203即刻询购立享优惠#长期有排单订 |
|||
INFINEON |
2016+ |
TO3P |
1800 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
Infineon/英飞凌 |
1926+ |
TO-247 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
INFINEON |
PBFREE |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
2015+ |
TO-247 |
19898 |
专业代理原装现货,特价热卖! |
|||
INFINEON/英飞凌 |
23+ |
TO-247 |
30000 |
全新原装,假一赔十,价格优势 |
H20R120芯片相关品牌
H20R120规格书下载地址
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2019-1-28
DdatasheetPDF页码索引
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