位置:H20R1202 > H20R1202详情

H20R1202中文资料

厂家型号

H20R1202

文件大小

375.89Kbytes

页面数量

12

功能描述

Reverse Conducting IGBT with monolithic body diode

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

H20R1202数据手册规格书PDF详情

Reverse Conducting IGBT with monolithic body diode

Features:

• Powerful monolithic Body Diode with very low forward voltage

• Body diode clamps negative voltages

• Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

• Inductive Cooking

• Soft Switching Applications

更新时间:2025-12-15 17:16:00
供应商 型号 品牌 批号 封装 库存 备注 价格
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