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H11F价格
参考价格：￥9.7313
型号：H11F1M 品牌：FAIRCHILD 备注：这里有H11F多少钱，2026年最近7天走势，今日出价，今日竞价，H11F批发/采购报价，H11F行情走势销售排行榜，H11F报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | FAIRCHILD 仙童半导体 |   | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low | ONSEMI 安森美半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
PHOTO FET OPTOCOUPLERS DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and | FAIRCHILD 仙童半导体 | | ||
Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
H11F1M, H11F2M, H11F3M Photo FET Optocouplers General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l | FAIRCHILD 仙童半导体 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 | | ||
封装/外壳：6-DIP（0.400"，10.16mm） 包装：管件 描述：OPTOISOLTR 5.3KV PHOTO FET 6-DIP 隔离器 光隔离器 - 晶体管，光电输出 | ONSEMI 安森美半导体 | | ||
PHOTON COUPLED BILATERAL ANALOG FET | ISOCOM 英国安数光 | | ||
6 引脚 DIP 双向模拟 FET 输出光耦合器 | ONSEMI 安森美半导体 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
PHOTO FET OPTOCOUPLERS 文件：553.74 Kbytes Page：10 Pages | FAIRCHILD 仙童半导体 | | ||
6引脚DIP双向模拟FET输出光电耦合器 | ONSEMI 安森美半导体 | |
H11F产品属性
- 类型
描述
- 型号
H11F
- 功能描述
MOSFET输出光电耦合器 DIP-6 ANALOG FET
- RoHS
否
- 制造商
Fairchild Semiconductor
- 每芯片的通道数量
1 Channel
- 输出设备
Photo MOSFET
- 绝缘电压
5000 Vrms
- 最大工作温度
+ 100 C
- 最小工作温度
- 40 C
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild |
25+ |
16 |
公司优势库存 热卖中!! |
||||
FSC |
专业光耦 |
SOP6 |
65800 |
光耦原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
23+ |
DIP6 |
65480 |
||||
ON/FSC |
24+ |
DIP |
9200 |
绝对原装现货,价格低,欢迎询购! |
|||
ON/安森美 |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
25+ |
2500 |
公司现货库存 |
|||||
MOT/QTC |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
FAIRCHILD/仙童 |
2450+ |
SOP-6 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FSC |
24+ |
SOP-6 |
5000 |
全新原装正品,现货销售 |
|||
FSC |
25+ |
SOP-6 |
10800 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
H11F规格书下载地址
H11F参数引脚图相关
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H11F数据表相关新闻
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GYD1E271MCW1GS
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H1102NL
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可立即发货
2019-9-24
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