位置：首页 > IC中文资料第3420页 > H11D1SVM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11D1SVM | 6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 |   | |
6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts) The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays. | MOTOROLA 摩托罗拉 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | |
H11D1SVM产品属性
- 类型
描述
- 型号
H11D1SVM
- 功能描述
晶体管输出光电耦合器 White Package, VDE High Voltage
- RoHS
否
- 制造商
Vishay Semiconductors
- 输入类型
DC
- 最大集电极/发射极电压
70 V
- 最大集电极/发射极饱和电压
0.4 V
- 绝缘电压
5300 Vrms
- 电流传递比
100 % to 200 %
- 最大正向二极管电压
1.65 V
- 最大输入二极管电流
60 mA
- 最大集电极电流
100 mA
- 最大功率耗散
100 mW
- 最大工作温度
+ 110 C
- 最小工作温度
- 55 C
- 封装/箱体
DIP-4
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MAKOSEMI |
23+ |
- |
1600008040 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
26+ |
N/A |
52000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
HARRIS |
25+ |
SMD8 |
2920 |
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙ |
|||
23+ |
SOP-8 |
30423 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
PULSE |
2447 |
SMD16 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PULSE |
23+ |
SOP16 |
50000 |
全新原装正品现货,支持订货 |
|||
HI |
23+ |
SOP-8 |
7000 |
绝对全新原装!现货!特价!请放心订购! |
|||
24+ |
DIP |
112 |
|||||
YAGEO / PULSE ELECTRONICS |
2026+ |
N/A |
6058 |
芯为深圳仓现货 |
|||
FAIRCHILD |
22+ |
DIP-6 |
5000 |
进口原装!现货库存 |
H11D1SVM规格书下载地址
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