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H11D1S价格

参考价格:¥1.6609

型号:H11D1S 品牌:Lite-On 备注:这里有H11D1S多少钱,2026年最近7天走势,今日出价,今日竞价,H11D1S批发/采购报价,H11D1S行情走势销售排行榜,H11D1S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
H11D1S

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

FAIRCHILD

仙童半导体

H11D1S

Property of Lite-On Only

FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type

LITEON

光宝科技

H11D1S

晶体管输出光电耦合器 Optocoupler Phototrans

LITEON

光宝科技

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

FAIRCHILD

仙童半导体

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

FAIRCHILD

仙童半导体

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

ONSEMI

安森美半导体

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

ONSEMI

安森美半导体

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

FAIRCHILD

仙童半导体

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

ONSEMI

安森美半导体

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

FAIRCHILD

仙童半导体

Property of Lite-On Only

FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type

LITEON

光宝科技

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

ONSEMI

安森美半导体

晶体管输出光电耦合器 PTR 30%, 5KV

LITEON

光宝科技

晶体管输出光电耦合器 PTR 30%, 5KV

LITEON

光宝科技

6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays.

MOTOROLA

摩托罗拉

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

FAIRCHILD

仙童半导体

HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

FAIRCHILD

仙童半导体

H11D1S产品属性

  • 类型

    描述

  • 型号

    H11D1S

  • 功能描述

    晶体管输出光电耦合器 Optocoupler Phototrans

  • RoHS

  • 制造商

    Vishay Semiconductors

  • 输入类型

    DC

  • 最大集电极/发射极电压

    70 V

  • 最大集电极/发射极饱和电压

    0.4 V

  • 绝缘电压

    5300 Vrms

  • 电流传递比

    100 % to 200 %

  • 最大正向二极管电压

    1.65 V

  • 最大输入二极管电流

    60 mA

  • 最大集电极电流

    100 mA

  • 最大功率耗散

    100 mW

  • 最大工作温度

    + 110 C

  • 最小工作温度

    - 55 C

  • 封装/箱体

    DIP-4

  • 封装

    Bulk

更新时间:2026-8-1 10:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
SMD
20000
原装
26+
N/A
67000
一级代理-主营优势-实惠价格-不悔选择
LITE-ON
24+
SOT-4097&NBS
3200
只做原装正品现货 欢迎来电查询15919825718
鑫远鹏
25+
NA
5000
价优秒回原装现货
onsemi
23+
TO-18
12800
原装正品代理商最优惠价格 现货或订货
FDS
25+
SOP6
66880
原装正品,欢迎询价
ON/安森美
26+
SMD
8880
原装认准芯泽盛世!
LITEON
23+
SOP-6
8560
受权代理!全新原装现货特价热卖!
FAIRCHILDSEMICONDUCTOR
21+
NA
12820
只做原装,质量保证
ONSEMI/安森美
2450+
9850
只做原厂原装正品现货或订货假一赔十!

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