H11D1价格
参考价格：￥1.6266
型号：H11D1 品牌：VISHAY 备注：这里有H11D1多少钱，2026年最近7天走势，今日出价，今日竞价，H11D1批发/采购报价，H11D1行情走势销售排行榜，H11D1报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H11D1 | 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts) The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays. | MOTOROLA 摩托罗拉 |   | |
H11D1 | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | |
H11D1 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage DESCRIPTION The H11Dx has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coup | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D1 | Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type | LITEON 光宝科技 | | |
H11D1 | HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part | ISOCOM 英国安数光 | | |
H11D1 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D1 | Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage Very high collector emitter breakdown voltage BVCEO = 300 V\nIsolation test voltage: 5000 VRMS\nLow coupling capacitance; | VISHAYVishay Siliconix 威世威世科技公司 | | |
H11D1 | 6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts) | ETC 知名厂家 | ETC | |
H11D1 | H11D1 Transistor Detector 6 Pin, Single | ISOCOM 英国安数光 | | |
H11D1 | Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage DESCRIPTION The H11Dx has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coup | VISHAYVishay Siliconix 威世威世科技公司 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type | LITEON 光宝科技 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type | LITEON 光宝科技 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea | FAIRCHILD 仙童半导体 | | ||
Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type | LITEON 光宝科技 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea | ONSEMI 安森美半导体 | | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua | FAIRCHILD 仙童半导体 | | ||
HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part | ISOCOM 英国安数光 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, with Base Connection, High BV Voltage DESCRIPTION The H11D1, H11D2, H11D3, H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1, H11D2 are identical and the H11D3, H11D4 are identical. FEATURES • CTR at IF = 1 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS • | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage 文件：120.43 Kbytes Page：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
H11D1产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Channels：
1
- CTR (Min) (%)：
20
- CTR tested @ IF (mA)：
10
- VCE(sat) (Max) (V)：
0.4
- BVCEO (Min) (V)：
300
- BVCBO (Min) (V)：
300
- BVECO (Min) (V)：
7
- ton (Max) (µs)：
5
- toff (Max) (µs)：
5
- VISO (Min) (V)：
4200
- TOPR (Min) (°C)：
-40
- TOPR (Max) (°C)：
100
- Package Type：
PDIP-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
SMD6 |
65480 |
||||
FSC |
SOP-6 |
10000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
05+ |
原厂原装 |
11170 |
只做全新原装真实现货供应 |
|||
Fairchild |
25+ |
600 |
公司优势库存 热卖中!! |
||||
FAIRCHILD |
25+ |
DIP |
19500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FAIRCHILDSEMICONDUCTOR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
25+ |
SMD |
20000 |
原装 |
|||
FAIRCHILD |
26+ |
DIP6 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
FAIRCHILD |
25+23+ |
11492 |
绝对原装正品全新进口深圳现货 |
||||
FSC |
2018+ |
DIP |
26976 |
代理原装现货/特价热卖! |
H11D1规格书下载地址
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