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H11D1价格
参考价格：￥1.6266
型号：H11D1 品牌：VISHAY 备注：这里有H11D1多少钱，2025年最近7天走势，今日出价，今日竞价，H11D1批发/采购报价，H11D1行情走势销售排行榜，H11D1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H11D1 | 6-PinDIPOptoisolatorsHighVoltageTransistorOutput(300Volts) TheH11D1andH11D2consistofgalliumarsenideinfraredemittingdiodesopticallycoupledtohighvoltage,silicon,phototransistordetectorsinastandard6–pinDIPpackage.Theyaredesignedforhighvoltageapplicationsandareparticularlyusefulincopymachinesandsolidstaterelays. | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   |
H11D1 | HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
H11D1 | HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart | ISOCOMISOCOM COMPONENTS 英国安数光 |  | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
H11D1 | PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光宝科技光宝科技股份有限公司 |  | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS • | VishayVishay Siliconix 威世科技威世科技半导体 | | |
H11D1 | Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage DESCRIPTION TheH11DxhasaGaAsinfraredemittingdiodeemitter, whichisopticallycoupledtoasiliconplanarphototransistor detector,andisincorporatedinaplasticDIP-6package. Itfeaturesahighcurrenttransferratio,lowcoupling capacitance,andhighisolationvoltage. Thecoup | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光宝科技光宝科技股份有限公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光宝科技光宝科技股份有限公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HighVoltagePhototransistorOptocouplers GeneralDescription The4N38M,H11DXMandMOC8204Marephototransistor-typeopticallycoupledoptoisolators.AgalliumarsenideinfraredemittingdiodeiscoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindual-in-linepackage. Fea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PropertyofLite-OnOnly FEATURES *Currenttransferratio (CTR:MIN.20atIF=10mA,VCE=10V) *Highisolationvoleagebetweeninputandoutput (Viso=5,000Vrms) *VeryHighcollector-emitterbreakdownvoltage (BVCER=300V) *Dual-in-linepackage: H11D1:1-channeltype | LITEONLite-On Technology Corporation 光宝科技光宝科技股份有限公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
6-PinDIPHighVoltagePhototransistorOptocouplers Description The4N38M,H11D1M,H11D3MandMOC8204Mare phototransistor−typeopticallycoupledoptoisolators.Agallium arsenideinfraredemittingdiodeiscoupledwithahighvoltageNPN siliconphototransistor.Thedeviceissuppliedinastandardplastic six−pindual−in−linepackage. Fea | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
HIGHVOLTAGEPHOTOTRANSISTOROPTOCOUPLERS DESCRIPTION TheH11DXand4N38arephototransistor-typeopticallycoupledoptoisolators.AninfraredemittingdiodemanufacturedfromspeciallygrowngalliumarsenideisselectivelycoupledwithahighvoltageNPNsiliconphototransistor.Thedeviceissuppliedinastandardplasticsix-pindua | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
HIGHVOLTAGEOPTICALLYCOUPLEDISOLATORPHOTOTRANSISTOROUTPUT DESCRIPTION TheH11DseriesofopticallycoupledisolatorsconsistofinfraredlightemittingdiodeandNPNsiliconphototransistorinastandard6pindualinlineplasticpackage. FEATURES Options:- 10mmleadspread-addGafterpartno. Surfacemount-addSMafterpart | ISOCOMISOCOM COMPONENTS 英国安数光 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS • | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,withBaseConnection,HighBVVoltage DESCRIPTION TheH11D1,H11D2,H11D3,H11D4areoptocouplerswithveryhighBVCER.TheyareintendedfortelecommunicationsapplicationsoranyDCapplicationrequiringahighblockingvoltage. TheH11D1,H11D2areidenticalandtheH11D3,H11D4areidentical. FEATURES •CTRatIF=1 | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS • | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCEOVoltage FEATURES •Veryhighcollectoremitterbreakdownvoltage BVCEO=300V •Isolationtestvoltage:5000VRMS •Lowcouplingcapacitance •Highcommonmodetransientimmunity •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 AGENCYAPPROVALS • | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
Optocoupler,PhototransistorOutput,WithBaseConnection,HighBVCERVoltage 文件：120.43 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | | |
SealedTinyPushbuttonSwitches 文件：439.76 Kbytes Page：6 Pages | CK-COMPONENTS C&K Components |  | |
H11D1产品属性
- 类型
描述
- 型号
H11D1
- 功能描述
晶体管输出光电耦合器 HV Phototransistor
- RoHS
否
- 制造商
Vishay Semiconductors
- 输入类型
DC
- 最大集电极/发射极电压
70 V
- 最大集电极/发射极饱和电压
0.4 V
- 绝缘电压
5300 Vrms
- 电流传递比
100 % to 200 %
- 最大正向二极管电压
1.65 V
- 最大输入二极管电流
60 mA
- 最大集电极电流
100 mA
- 最大功率耗散
100 mW
- 最大工作温度
+ 110 C
- 最小工作温度
- 55 C
- 封装/箱体
DIP-4
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2410+ |
DIP-6 |
100 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
VISHAY/威世 |
2450+ |
DIP6 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
FSC |
25+ |
DIP-6 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
MOT |
23+ |
DIP6 |
110 |
原装现货 |
|||
ONSEMI/安森美 |
25+ |
DIP6 |
32360 |
ONSEMI/安森美全新特价H11D1即刻询购立享优惠#长期有货 |
|||
INT |
02+ |
SOP-6 |
6000 |
绝对原装自己现货 |
|||
FSC |
DIP-6 |
3000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
MOTOROLA/摩托罗拉 |
24+ |
SOIC |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
24+ |
SOP-4 |
4500 |
只做原厂渠道 可追溯货源 |
|||
INF |
10+ |
DIP-6 |
7800 |
全新原装正品,现货销售 |
H11D1芯片相关品牌
H11D1规格书下载地址
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- H11AG1VM
- H11AG1TVM
- H11AG1SR2M
- H11AG1SM
- H11AG1M
- H11AA4X
- H11AA4VM
H11D1数据表相关新闻
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- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
