PHOTODARLINGTON OPTOCOUPLERS

DESCRIPTION The CNX48U, H11BX, MOC8080 and TIL113 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval avail

封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

General Purpose 6-Pin Photodarlington Optocoupler

Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Features ■ High sensitivity to low input drive current ■ Meets or exceeds all JEDEC Registered Specifications ■ UL, C-UL approved, Fil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

DC Input 6-Pin Photodarlington Optocoupler

Description The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option. Features • High isolation 5000 VRMS • CTR flexibil

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

6 PIN PHOTODARLINGTON PHOTOCOUPLER

Description The TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector. They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N3

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISO 5KV DARL W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

6 PIN PHOTODARLINGTON

文件：331.7 Kbytes Page：13 Pages

6-Pin DIP Optoisolators Darlington Output(Low Input Current)

The H11B1 and H11B3 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applications requiring high output current (IC) at low LED input currents (IF). • High Sensitivity to Low Input Drive

PHOTODARLINGTON OPTOCOUPLERS

文件：140.38 Kbytes Page：7 Pages

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Epitaxial Planar Zener Diodes for Stabilizer

Features • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped.

Magnetic field sensor

DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors,