RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4

RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 Features • Low-noise use : NF=1.1dB typ (f=2GHz) • High cut-off frequency : fT=25GHz typ (VCE=3V) • Low operating voltage • High gain : |S21e|2=17dB typ (f=2GHz) • Halogen free compliance

丝印代码：K0389；Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting • Pb-free • Halogen-free

UHF to X Band Low-Noise Amplifier and OSC Applications

文件：476.42 Kbytes Page：15 Pages

丝印代码：K0389；Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

文件：358.72 Kbytes Page：11 Pages

丝印代码：K0389；Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

文件：169.26 Kbytes Page：11 Pages