位置：首页 > IC中文资料第6951页 > H02N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H02N60 | N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 |   | |
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N CHANNEL ENHANCEMENT MODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
H02N60产品属性
- 类型
描述
- 型号
H02N60
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HUAJING |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
华昕 |
23+ |
TO251 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HJ/华昕 |
TO-220F |
6434 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TAIWAN |
24+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
HSMC |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
HSMC |
07+ |
TO252 |
139 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
华润华晶品牌 |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
|||
HSMC |
23+ |
NA |
116 |
专做原装正品,假一罚百! |
|||
HUAJING |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
|||
HUAJING |
25+ |
TO-TO-220F |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
H02N60规格书下载地址
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