位置：首页 > IC中文资料第6917页 > H02N60I
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H02N60I | N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient | HSMC 华昕 |   | |
N-Channel 650 V (D-S) MOSFET 文件：1.70191 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70195 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70167 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.70169 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N CHANNEL ENHANCEMENT MODE 文件：701.78 Kbytes Page：6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
H02N60I产品属性
- 类型
描述
- 型号
H02N60I
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
华昕 |
1822+ |
TO-252 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
A |
24+ |
b |
8 |
||||
H |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
|||
HSMC |
07+ |
TO252 |
139 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
H |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
HSMC |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
华昕 |
23+ |
TO251 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Littelfuse |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
FUJ |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
H02N60I芯片相关品牌
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DdatasheetPDF页码索引
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