位置：首页 > IC中文资料第5466页 > H01N60
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
H01N60 | N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 |   | |
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw | A-POWER 富鼎先进电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08589 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：103.96 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08593 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
H01N60产品属性
- 类型
描述
- 型号
H01N60
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HSMC |
23+ |
SOT-252 |
55000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
HSMC |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
AP |
23+ |
TO-263 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
H |
23+ |
TO251 |
6000 |
专注配单,只做原装进口现货 |
|||
MICR |
2025+ |
SSOP16 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
华昕 |
09+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
|||
MOT |
23+ |
DIP |
6000 |
原装正品假一罚百!可开增票! |
|||
H |
23+ |
TO251 |
6000 |
专注配单,只做原装进口现货 |
|||
MIC |
24+ |
SSOP-16 |
1280 |
||||
万润 |
两年内 |
NA |
3454 |
实单价格可谈 |
H01N60规格书下载地址
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