位置：首页 > IC中文资料第5466页 > H01N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
H01N60 | N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 |   | |
H01N60 | N-Channel Power Field Effect Transistor | HSMC 华昕 | | |
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de | HSMC 华昕 | | ||
N-Channel Power Field Effect Transistor | HSMC 华昕 | | ||
High Voltage MOSFET | HSMC 华昕 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw | A-POWER 富鼎先进电子 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw | A-POWER 富鼎先进电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08589 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：103.96 Kbytes Page：4 Pages | A-POWER 富鼎先进电子 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08593 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
H01N60产品属性
- 类型
描述
- 型号
H01N60
- 制造商
HSMC
- 制造商全称
HSMC
- 功能描述
N-Channel Power Field Effect Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HSMC |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
TELEGARTNER |
24+/25+ |
709 |
原装正品现货库存价优 |
||||
MICR |
2025+ |
SSOP16 |
3750 |
全新原厂原装产品、公司现货销售 |
|||
华昕 |
09+ |
TO-92 |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
16+ |
SOT-323 |
10000 |
进口原装现货/价格优势! |
|||
HUAJING |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
KEC |
25+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
MIC |
24+ |
SSOP-16 |
1280 |
||||
MORNSUN |
2450+ |
DIP |
9850 |
只做原装正品现货或订货假一赔十! |
|||
不明 |
24+ |
SMD |
27950 |
郑重承诺只做原装进口现货 |
H01N60规格书下载地址
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