型号 功能描述 生产厂家 企业 LOGO 操作
H01N60S

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

HSMC

华昕

H01N60S

N-Channel Power Field Effect Transistor

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

HSMC

华昕

N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

HSMC

华昕

High Voltage MOSFET

HSMC

华昕

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

A-POWER

富鼎先进电子

N-Channel 650 V (D-S) MOSFET

文件:1.08589 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:103.96 Kbytes Page:4 Pages

A-POWER

富鼎先进电子

N-Channel 650 V (D-S) MOSFET

文件:1.08593 Mbytes Page:9 Pages

VBSEMI

微碧半导体

H01N60S产品属性

  • 类型

    描述

  • 型号

    H01N60S

  • 制造商

    HSMC

  • 制造商全称

    HSMC

  • 功能描述

    N-Channel Power Field Effect Transistor

更新时间:2025-10-18 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
华昕
09+
TO-92
880000
明嘉莱只做原装正品现货
MIC
24+
SSOP-16
1280
不明
24+
SMD
27950
郑重承诺只做原装进口现货
ROHM
17+
SOT-323
6200
100%原装正品现货
ROHM
16+
SOT-323
10000
进口原装现货/价格优势!
HEADER
23+
05+
6500
专注配单,只做原装进口现货
ON/安森美
23+
QFN5
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TELEGARTNER
24+/25+
709
原装正品现货库存价优
H
22+
TO-252
6000
十年配单,只做原装
MICR
2025+
SSOP16
3750
全新原厂原装产品、公司现货销售

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