N Channel MOSFET

[STANSON TECHNOLOGY] Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature

N Channel MOSFET 1.0A

[STANSON TECHNOLOGY]Robust High Voltage Temination.\nAvalanche Energy Specified\nSource-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\nDiode is Characterized for Use in Bridge Circurits\nIDSS and VDS(on) Specified at Elevated Temperature

N Channel MOSFET

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N-Channel Power Field Effect Transistor

Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

Mini size of Discrete semiconductor elements

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N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：106.9 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

文件：106.9 Kbytes Page：6 Pages