N Channel MOSFET

[STANSON TECHNOLOGY] Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature

N Channel MOSFET

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N Channel MOSFET 1.0A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TO-252 package is universally preferred for all commercial industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01N60J) is available for low-profile applications. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Sw

N-Channel 650 V (D-S) MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-Channel 650 V (D-S) MOSFET

文件：1.08593 Mbytes Page：9 Pages