TeSys Deca - auxiliary contact block - 2 NO

Main Range TeSys TeSys Deca Device short name GVAE Product or Component Type Auxiliary contact block Product Compatibility GV2L GV2P GV2RT GV3P GV2LE GV3L LS1D323 GV2ME Mounting Location Front side Pole contact composition 2 NO Quantity per Set Set of 10

TeSys Deca - auxiliary contact block - 2 NO

Main Range TeSys TeSys Deca Device short name GVAE Product or Component Type Auxiliary contact block Product Compatibility GV2L GV2P GV2RT GV3P GV2LE GV3L LS1D323 GV2ME

辅助触点, 2个触点, 2NO, 60 V dc, 240 V ac, 正面安装, GVAE系列

TeSys Deca - auxiliary contact block - 2 NO

Main Range TeSys TeSys Deca Device short name GVAE Product or Component Type Auxiliary contact block Product Compatibility GV2L GV2P GV2RT GV3P GV2LE GV3L LS1D323 GV2ME

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.