Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

文件：434 Kbytes Page：8 Pages

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

文件：434 Kbytes Page：8 Pages

封装/外壳：H-87265J-2 包装：带 描述：270W, GAN HEMT, 48V, 2110-2200MH 分立半导体产品 晶体管 - FET，MOSFET - 射频

封装/外壳：H-87265J-2 包装：带 描述：270W, GAN HEMT, 48V, 2110-2200MH 分立半导体产品 晶体管 - FET，MOSFET - 射频

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

文件：434 Kbytes Page：8 Pages