Description

The GTVA212701FA is a 270-watt GaN on SiC high electron

mobility transistor (HEMT) for use in the 2110 to 2200 MHz

frequecy band. It features input matching, high efficiency,

and a thermally-enhanced earless package.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance (class AB),

2180 MHz, 48 V, 10 µs pulse width, 10 duty cycle

- Output power P3dB = 300 W

- Drain efficiency = 68.5

- Gain = 17.5 dB

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Capable of handling 10:1 VSWR @ 48 V, 56.2 W

(WCDMA) output power

• Low thermal resistance

• Pb-free and RoHS-compliant