N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Features * Low on-resistance * Capable of 2.5V gate drive * Low drive current * Surface mount package

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

丝印代码：9926；Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel MOSFET

Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages