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型号	功能描述	生产厂家企业	LOGO
GT40	PNEUMATIC TURBINE VIBRATIORS [VIBTEC]	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
GT400P10K	P-Channel Enhancement Mode Power MOSFET Description The GT400P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT400P10M	P-Channel Enhancement Mode Power MOSFET Description The GT400P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT400P10T	P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters	GOFORD 谷峰半导体	GOFORD
GT40G121	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs (typ.) (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)	TOSHIBA 东芝	TOSHIBA
GT40J121	Discrete IGBTs Silicon N-Channel IGBT Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40J321	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT40J322	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT40M101	N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40M301	N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40Q321	Voltage Resonance Inverter Switching Application Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 μs (typ.) (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) • FRD included between emitter and collector	TOSHIBA 东芝	TOSHIBA
GT40Q321	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT40Q322	Voltage Resonance Inverter Switching Application Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40QR21	Discrete IGBTs Silicon N-Channel IGBT Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr= 0.60 µs (typ.) (IF = 15 A) 5. Low saturation voltage : VC	TOSHIBA 东芝	TOSHIBA
GT40T101	N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40T301	Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A) FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 3.7 V (	TOSHIBA 东芝	TOSHIBA
GT40T302	Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf= 0.23 μs (typ.) (IC= 40 A) FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC=	TOSHIBA 东芝	TOSHIBA
GT40T302	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT40T321	Consumer Application Voltage Resonance Inverter Switching Application Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(	TOSHIBA 东芝	TOSHIBA
GT40T321	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
GT400FF120B8S	Automotive Modulese-Full Bridge-1200V	NJSME 银茂微	NJSME
GT400FF75C8NS	Automotive Modulese-Full Bridge-750V	NJSME 银茂微	NJSME
GT400HF120T2VH-M	IGBT Half Bridge-1200V	NJSME 银茂微	NJSME
GT400S125A	包装：盒描述：TOR SCREW 400A 85-125A 继电器配件	ETC 知名厂家	ETC
GT400S160A	包装：盒描述：TOR SCREW 400A 100-160A 继电器配件	ETC 知名厂家	ETC
GT4044RA2	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4044RD1	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4044RD3	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4044ZA2	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4044ZD1	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4044ZD3	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048RA2	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048RD1	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048RD3	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048ZA2	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048ZD1	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT4048ZD3	GT 10 to 40 Amps AC SSR 文件：485.51 Kbytes Page：2 Pages	GREEGOO	GREEGOO
GT40M101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40M301	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q321	Silicon N Channel IEGT Voltage Resonance Inverter Switching Application 文件：157.94 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q321_06	Silicon N Channel IEGT Voltage Resonance Inverter Switching Application 文件：157.94 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q322	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q323	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application 文件：150.9 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q323	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40Q323_06	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application 文件：150.9 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40RR21	Discrete IGBTs Silicon N-Channel IGBT 文件：226.95 Kbytes Page：9 Pages	TOSHIBA 东芝	TOSHIBA
GT40T101	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40T301	Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications 文件：166.5 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40T301	Discrete IGBTs 文件：835.68 Kbytes Page：16 Pages	TOSHIBA 东芝	TOSHIBA
GT40T301_06	Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications 文件：166.5 Kbytes Page：6 Pages	TOSHIBA 东芝	TOSHIBA
GT40WR21	Discrete IGBTs Silicon N-Channel IGBT 文件：131.18 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

GT40产品属性

类型
描述
型号
GT40
功能描述
PNEUMATIC TURBINE VIBRATIORS

GT40供应商更多...

更新时间：2025-12-22 20:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	GT40QR21	TOSHIBA/东芝	24+		30000	原装现货	询价
深圳市明嘉莱科技有限公司	GT40QR21(STA1,E,D	TOSHIBA/东芝	22+	明嘉莱只做原装正品现货	2510000	TO-3P	询价
深圳市科恒伟业电子有限公司	GT40RR21(S1AT1,E,S)	TOSHIBA/东芝	2450+	TO-247	9850	只做原装正品现货或订货假一赔十!	询价
深圳市凌旭科技有限公司	GT40QR21(STA1ED	TOSHIBA/东芝	21+	TO-3P	3000	只做原装,一定有货,不止网上数量,量多可订货!	询价
华富测量(深圳)传感技术有限公司	GT40T101	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价
深圳市富芯乐电子科技有限公司	GT40T301	TOS	24+	TO-3PL	5000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市星佑电子有限公司	GT40M101	TOSHIBA	02+	TO-3P	1000	自己公司全新库存绝对有货	询价
深圳市科达星科技有限公司	GT40M101	TOSHIBA	24+	TO-3P	27500	原装正品,价格最低!	询价
深圳市拓亿芯电子有限公司	GT40QR21	TOSHIBA/东芝	25+	TO-3P	9000	全新原装现货,假一赔十	询价
深圳市勤思达科技有限公司	GT40RR21(S1AT1ES)	TOS	24+	TO-247	5000	全新原装正品,现货销售	询价

GT40芯片相关品牌

GT40规格书下载地址

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GT40数据表相关新闻

GT17HN-4DP-2DS(C)
进口代理
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原装正品现货
2022-4-22
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GT24C1024-2GLI，全新原装.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
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GT40产品属性

GT40供应商更多...

GT40芯片相关品牌

GT40规格书下载地址

GT40参数引脚图相关

GT40数据表相关新闻

GT17HN-4DP-2DS(C)

GT8E-8S-HU

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GT50GR22

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GST5009MLF

DdatasheetPDF页码索引