型号 功能描述 生产厂家 企业 LOGO 操作
GT40

PNEUMATIC TURBINE VIBRATIORS

[VIBTEC]

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未分类制造商

P-Channel Enhancement Mode Power MOSFET

Description The GT400P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT400P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs (typ.) (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Voltage Resonance Inverter Switching Application

Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 μs (typ.) (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) • FRD included between emitter and collector

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Voltage Resonance Inverter Switching Application

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr= 0.60 µs (typ.) (IF = 15 A) 5. Low saturation voltage : VC

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Parallel Resonance Inverter Switching Applications ​​​​​​​ • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A) FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 3.7 V (

TOSHIBA

东芝

Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf= 0.23 μs (typ.) (IC= 40 A) FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC=

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Consumer Application Voltage Resonance Inverter Switching Application

Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC(

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Automotive Modulese-Full Bridge-1200V

NJSME

银茂微

Automotive Modulese-Full Bridge-750V

NJSME

银茂微

IGBT Half Bridge-1200V

NJSME

银茂微

包装:盒 描述:TOR SCREW 400A 85-125A 继电器 配件

ETC

知名厂家

包装:盒 描述:TOR SCREW 400A 100-160A 继电器 配件

ETC

知名厂家

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

GT 10 to 40 Amps AC SSR

文件:485.51 Kbytes Page:2 Pages

GREEGOO

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IEGT Voltage Resonance Inverter Switching Application

文件:157.94 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel IEGT Voltage Resonance Inverter Switching Application

文件:157.94 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

文件:150.9 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

文件:150.9 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

文件:226.95 Kbytes Page:9 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

文件:166.5 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs

文件:835.68 Kbytes Page:16 Pages

TOSHIBA

东芝

Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications

文件:166.5 Kbytes Page:6 Pages

TOSHIBA

东芝

Discrete IGBTs Silicon N-Channel IGBT

文件:131.18 Kbytes Page:5 Pages

TOSHIBA

东芝

GT40产品属性

  • 类型

    描述

  • 型号

    GT40

  • 功能描述

    PNEUMATIC TURBINE VIBRATIORS

更新时间:2025-11-6 13:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
24+
TO3PL
60000
TOSHIBA/东芝
24+
30000
原装现货
TOSHIBA/东芝
25+
原封装
66000
郑重承诺只做原装进口现货
TOSHIBA/东芝
22+
明嘉莱只做原装正品现货
2510000
TO-3P
TOSHIBA
24+
TO-3P
27500
原装正品,价格最低!
TOSHIBA/假货赔房
23+
TO3P
50000
全新原装正品现货,支持订货
VISHAY
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
TOSHIBA/东芝
25+
原厂原封可拆样
54648
百分百原装现货 实单必成 欢迎询价
TOSHIBA
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!
银茂微
23+
MODULE
4500
专营国产功率器件

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