位置:首页 > IC中文资料第5742页 > GT40
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GT40 | PNEUMATIC TURBINE VIBRATIORS [VIBTEC] | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
P-Channel Enhancement Mode Power MOSFET Description The GT400P10K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description The GT400P10M uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |||
P-Channel Enhancement Mode Power MOSFET Description The GT400P10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |||
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications • Enhancement-mode • High speed: tf = 0.30 µs (typ.) (IC = 60 A) • Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A) | TOSHIBA 东芝 | |||
Discrete IGBTs Silicon N-Channel IGBT Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
Voltage Resonance Inverter Switching Application Voltage Resonance Inverter Switching Application • Fifth-generation IGBT • Enhancement mode type • High speed : tf = 0.41 μs (typ.) (IC = 40A) • Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) • FRD included between emitter and collector | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Voltage Resonance Inverter Switching Application Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
Discrete IGBTs Silicon N-Channel IGBT Features 1. 6.5th generation 2. The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. 3. Enhancement mode 4. High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr= 0.60 µs (typ.) (IF = 15 A) 5. Low saturation voltage : VC | TOSHIBA 东芝 | |||
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 40 A) FRD : trr = 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 3.7 V ( | TOSHIBA 东芝 | |||
Insulated Gate Bipolar Transistor Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications • FRD included between emitter and collector • Enhancement mode • High speed IGBT: tf= 0.23 μs (typ.) (IC= 40 A) FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC= | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Consumer Application Voltage Resonance Inverter Switching Application Discrete IGBTs (PDF:875KB) 03/2011 : http://toshiba.semicon-storage.com/info/docget.jsp?did=7429 * GT30G124 - Breakdown Voltage VCES(V) @Ta = 25C : 430V - IGBT Current Rating IC(A) @Ta = 25C : 200A * GT30J124 - Breakdown Voltage VCES(V) @Ta = 25C : 600V - IGBT Current Rating IC( | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Automotive Modulese-Full Bridge-1200V | NJSME 银茂微 | |||
Automotive Modulese-Full Bridge-750V | NJSME 银茂微 | |||
IGBT Half Bridge-1200V | NJSME 银茂微 | |||
包装:盒 描述:TOR SCREW 400A 85-125A 继电器 配件 | ETC 知名厂家 | ETC | ||
包装:盒 描述:TOR SCREW 400A 100-160A 继电器 配件 | ETC 知名厂家 | ETC | ||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
GT 10 to 40 Amps AC SSR 文件:485.51 Kbytes Page:2 Pages | GREEGOO | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IEGT Voltage Resonance Inverter Switching Application 文件:157.94 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IEGT Voltage Resonance Inverter Switching Application 文件:157.94 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application 文件:150.9 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application 文件:150.9 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs Silicon N-Channel IGBT 文件:226.95 Kbytes Page:9 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications 文件:166.5 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs 文件:835.68 Kbytes Page:16 Pages | TOSHIBA 东芝 | |||
Silicon N Channel IGBT Parallel Resonance Inverter Switching Applications 文件:166.5 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Discrete IGBTs Silicon N-Channel IGBT 文件:131.18 Kbytes Page:5 Pages | TOSHIBA 东芝 |
GT40产品属性
- 类型
描述
- 型号
GT40
- 功能描述
PNEUMATIC TURBINE VIBRATIORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
TO3PL |
60000 |
||||
TOSHIBA/东芝 |
24+ |
30000 |
原装现货 |
||||
TOSHIBA/东芝 |
25+ |
原封装 |
66000 |
郑重承诺只做原装进口现货 |
|||
TOSHIBA/东芝 |
22+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-3P |
|||
TOSHIBA |
24+ |
TO-3P |
27500 |
原装正品,价格最低! |
|||
TOSHIBA/假货赔房 |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
TOSHIBA/东芝 |
25+ |
原厂原封可拆样 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA |
23+ |
TO-3P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
银茂微 |
23+ |
MODULE |
4500 |
专营国产功率器件 |
GT40规格书下载地址
GT40参数引脚图相关
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GT24C1024-2GLI,全新原装.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三,V:八七六八零五五八.
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2019-11-25
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