14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes Page：9 Pages

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes Page：9 Pages