型号 功能描述 生产厂家&企业 LOGO 操作
HGT1S7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGT1S7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
HGT1S7N60C3D

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

文件:547.54 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

TheHGTP7N60C3DandHGT1S7N60C3DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedrop

Intersil

Intersil Corporation

Intersil

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

GeneralDescription TheHGTP7N60C3D,HGT1S7N60C3DSandHGT1S7N60C3DareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

14A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiodes

文件:547.54 Kbytes Page:9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

HGT1S7N60C3D产品属性

  • 类型

    描述

  • 型号

    HGT1S7N60C3D

  • 功能描述

    IGBT 晶体管 Optocoupler Phototransistor

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-5-30 15:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
24+
SOT-263
56000
公司进口原装现货 批量特价支持
FSC
23+
TO263
4500
全新原装、诚信经营、公司现货销售
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
FAIRCHIL
2025+
TO-263-2
5425
全新原厂原装产品、公司现货销售
FAIRCHILD/仙童
2048+
TO-263
9851
只做原装正品现货!或订货假一赔十!
FAIRCHI
24+
SOT-263
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHIL
23+
TO-263
4200
专业优势供应
仙童
TO-263
68500
一级代理 原装正品假一罚十价格优势长期供货
Fairchild/ON
23+
TO263AB
7000
FAIRCHILD/仙童
23+
TO-263
8400
专注配单,只做原装进口现货

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