14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes Page：9 Pages

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

The HGTP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

General Description The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

文件：547.54 Kbytes Page：9 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 14A 60W TO263AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单