N-CH MOS-FET

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. ■ -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability.

Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 6.2 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Ser

Multi-purpose Three-Phase BLDC Predriver

Overview The LV8968BB is a multi−purpose three−phase BLDC predriver for automotive applications and developed in compliance with ISO 26262. This 3−phase peripheral predriver offers a BEMF (Back ElectroMotive Force) output and the wide operating voltage range and AEC−Q100 qualification make th

50V CERAMIC DISC

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