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RF LDMOS Wideband Integrated Power Amplifiers

ETC

知名厂家

IGBT SIP MODULE Fast IGBT

Description The IGBT technology is the key to International Rectifiers advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar pow

IRF

Variable Capacitance Diode for VCO

Features • High capacitance ratio. (n =3.0.min) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design.

HITACHIHitachi Semiconductor

日立日立公司

NPN (B/W TV HORIZONTAL DEFLECTION OUTPUT)

B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage VCBO=150V • Collector Current IC=5A • Collector Dissipation PC=40W(TC=25°C)

SAMSUNG

三星

B/W TV Horizontal Deflection Output

B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=150V • Collector Current : IC=5A • Collector Dissipation : PC=40W(TC=25°C)

FAIRCHILD

仙童半导体

NPN SILICON RF TRANSISTORS

文件:34.63 Kbytes Page:2 Pages

SIEMENS

西门子

更新时间:2026-5-24 22:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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960
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