Top-side cooled 650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 / +10 V) • Very high switching frequency

650V增强型氮化镓晶体管

650 V CoolGaN ™ e-mode 功率晶体管的迷你卷轴选项，可实现极致效率和可靠性

CoolGaN ™晶体管 650 V ≤ G3，可实现极致效率和可靠性

Bottom-side cooled 650 V E-mode GaN transistor

Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 25 mΩ • IDS(max) = 60 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching freq

Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM

Overview The LC665304A, LC665306A, LC665308A, LC665312A, and LC665316A are 4-bit CMOS microcontrollers that integrate on a single chip all the functions required in a system controller, including ROM, RAM, I/O ports, a serial interface, 16-value comparator inputs, timers, interrupt functions, and

Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip OTP PROM

Overview The LC66P5316 is an on-chip OTP PROM version of the LC6653XX Series CMOS 4-bit single-chip microcontrollers. The LC66P5316 is appropriate for program development and product evaluation since it provides identical functionality and pin compatibility with the LC665316A. Features and Funct

6K-Byte/8K-Byte ROM-Contained Single-Chip 4-bit Microcomputer for Control-Oriented Applications