5 GHz WLAN LNAs / PA Drivers

The GRF2501 is an ultra-low noise amplifier (LNA) designed for IEEE 802.11a/n/ac/p applications (5.1 GHz to 5.925 GHz). Over this band, the device exhibits outstanding de-embedded noise figure (NF) of 0.80 dB along with excellent gain flatness and high linearity. The high gain, superior NF and direc • 4.9 GHz to 6 GHz Operation\n• Measurement Reference: 3.3V and 12 mA at 5.5 GHz\n• 0.80 dB Noise Figure (Deembedded)\n• 16.9 dB Gain\n• 2.7 V to 5.0 V Single Supply\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

High Gain, Ultra-LNA 802.11ac: 4.9??.0 GHz

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High Gain, Ultra-LNA

GRF2501-W is an ultra-low noise amplifier (LNA) designed for IEEE 802.11a/n/ac/p applications (5.1 GHz to 5.925 GHz). Over this band, the device exhibits outstanding de-embedded noise figure (NF) of 0.80 dB along with excellent gain flatness. The high gain, superior NF and directivity of its design Reference: 3.3V/15mA/5.5 GHz\n• Gain: 16.0 dB\n• De-embedded NF: 0.8 dB\n• IP1dB: -8.0 dBm\n• OP1dB: 23.0 dBm\n• AEC-Q100 Grade 2 Qualification Pending\n• Flexible Bias Voltage and Current\n• Internally Matched to 50 Ω\n• Process: GaAs pHEMT;

High Gain, Ultra-LNA 802.11ac: 4.9??.0 GHz

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HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

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Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

Silicon NPN epitaxial planer transistor

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