HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes FEATURES • Plastic Case With Heatsink For Heat Dissipation • Surge Overload Ratings to 400 Amperes • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

Adds Windows-compatible USB HID touchscreen interface to touch-screen modules

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Adds Windows-compatible USB HID touchscreen interface to touch-screen modules

CP250X DEVELOPMENT KIT

Kit Contents The CP250x Development Kit contains the following items: ■ CP250x Motherboard ■ CP2501 Development Daughter Board ■ CP250x Development Kit Quick-Start Guide ■ Product information CD-ROM including the following: ●Silicon Laboratories Integrated Development Environment (IDE)

封装/外壳：32-VFQFN 裸露焊盘 包装：卷带（TR） 描述：IC INTERFACE SPECIALIZED 32QFN 集成电路（IC） 专用

功能：触摸屏控制器 包装：盒 描述：KIT DEVELOPMENT CP2501 开发板，套件，编程器 评估和演示板及套件

HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon Complementary Transistors High Voltage for Video Output

Features: • High Breakdown Voltage • Excellent High Frequency Characteristics Applications: • High Definition CRT Display • Color TV Chroma Output, High Breakdown Voltage Drivers

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.