DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

10 Ampere Darlington Power Transistors Complementary Silicon

[multicomp] Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 (Typical) at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION • Built-in Base-Emitter Shunt Resistors • High DC current gain hFE = 1000 (Min) @ IC = -5A • Collector-Emitter Breakdown Voltage V(BR)CEO= -80V(Min) • Complement to type MJ3001 APPLICATIONS • Designed for use as output devices in complementary general purpose

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJ2501 is a Silicon Epitaxial-Base PNP power transistors in monolithic Darlington configuration, mounted in Jedec TO-3 meta case. It is intented for use in power linear and switching applications. ■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVI

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Silicon NPN Power Transistors

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COMPLEMENTARY POWER DARLINGTONS

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封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 80V 10A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

DESCRIPTION The PS2501-1, -4 and PS2501L-1, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2501-1, -4 are in a plastic DIP (Dual In-line Package) and the PS2501L-1, -4are lead bending type (Gull wing) for surface mount. FEATUR

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

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CAPTIVE PANEL SCREWS

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Eight-bit microcontroller

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Feets of Strength

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