Infrastructure LNAs

The GRF2073 is a broadband, linear, ultra-low noise amplifier designed for small cell, wireless infrastructure and other high performance RF applications requiring ultra-low NF, high gain and linearity.(1)Configured as a first stage LNA, linear driver or cascaded gain block, GRF2073 offers high leve Reference: 5V/70 mA at 3.6 GHz\n• Gain: 18.9 dB\n• Eval Board NF: 0.69 dB\n• OP1dB: 18.4 dBm\n• OIP3: 36.6 dBm\n• Flexible Bias Voltage and Current\n• Process: GaAs pHEMT;

Ultra-Low Noise Amplifier Tuning Range: 2.0 to 6.0 GHz

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Ultra-Low Noise Amplifier 2 to 6 GHz

FEATURES Excellent NF Performance High Gain Outstanding Linearity Flexible Bias Voltage and Current Drop-in Compatibility with Legacy SDARS LNA Solutions Compact 2.0 x 2.0 mm DFN-8 Package Process: GaAs pHEMT AEC-Q100 Grade 2 Qual Reference: 5 V / 2.3325 GHz / 70 mA Gain: 20.5 dB OIP3:

Ultra-LNA: SDARS/Compensator/GPS

GRF2073-W is a linear, ultra-low noise amplifier designed for automotive satellite radio multi-stage LNAs, signal booster and GPS applications.(1)With its ultra-low noise and high gain characteristics, this amplifier is an ideal first-stage LNA solution for high-performance, multi-stage SDARS LNA de Reference: 5V/70 mA/2332.5 MHz\n• Gain: 20.5 dB\n• NF: 0.40 dB\n• OP1dB: 19.8 dBm\n• OIP3: 35.0 dBm\n• Tested to AEC-Q100 Grade 2\n• Flexible Iddq: 20 mA to 100 mA\n• Flexible Bias Voltage: 2.7 to 5.5 volts\n• Unconditionally Stable\n• Process: GaAs E-pHEMT;

Ultra-Low Noise Amplifier Tuning Range: 2.0 to 6.0 GHz

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Integrated Circuit Transistor Array w/Clamp Diode and Strobe

Description: The NTE2073 is a 6–Channel sink driver consisting of 12 NPN transistors to form high current gain driver pairs. Each input has a diode and 20kΩ resistor in series to allow a negative voltage input. All inputs can be controlled simultaneously by a strobe input at Pin1. The pow

DUAL LOW VOLTAGE POWER AMPLIFIER

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DUAL LOW VOLTAGE POWER AMPLIFIER

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DUAL LOW VOLTAGE POWER AMPLIFIER

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Image rejecting front-end for GSM applications

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