DPDT Non-Latching Surface Mount 2.5GHz RF Relay

DESCRIPTION The GRF172 surface-mount Centigrid® relay is an ultraminiature, hermetically sealed, armature relay for 2.5 GHz RF applications. Its low profile height (.330”) and .100” grid spaced terminals make it an ideal choice where extreme packaging density and/or close PC board spacing are

DPDT Non-Latching Surface Mount 2.5GHz RF Relay

DESCRIPTION The GRF172 surface-mount Centigrid® relay is an ultraminiature, hermetically sealed, armature relay for 2.5 GHz RF applications. Its low profile height (.330”) and .100” grid spaced terminals make it an ideal choice where extreme packaging density and/or close PC board spacing are

DPDT Non-Latching Surface Mount 2.5GHz RF Relay

DESCRIPTION The GRF172 surface-mount Centigrid® relay is an ultraminiature, hermetically sealed, armature relay for 2.5 GHz RF applications. Its low profile height (.330”) and .100” grid spaced terminals make it an ideal choice where extreme packaging density and/or close PC board spacing are

DPDT Non-Latching Surface Mount 2.5GHz RF Relay

DESCRIPTION The GRF172 surface-mount Centigrid® relay is an ultraminiature, hermetically sealed, armature relay for 2.5 GHz RF applications. Its low profile height (.330”) and .100” grid spaced terminals make it an ideal choice where extreme packaging density and/or close PC board spacing are

DPDT Non-Latching Surface Mount 2.5GHz RF Relay

DESCRIPTION The GRF172 surface-mount Centigrid® relay is an ultraminiature, hermetically sealed, armature relay for 2.5 GHz RF applications. Its low profile height (.330”) and .100” grid spaced terminals make it an ideal choice where extreme packaging density and/or close PC board spacing are

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE