位置:首页 > IC中文资料第12744页 > GQ2131
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GQ2131 | CMOS POSITIVE VOLTAGE REGULATOR Description The GQ2131 is a fixed 1.2V of positive, linear regulators feature low quiescent current (60μA typ.) with low dropout voltage, making them ideal for battery applications. This rugged device has both Thermal Shutdown, and Current Fold-back to prevent device failure under the “Worst” of | GTM 勤益投资控股 | ||
GQ2131 | CMOS POSITIVE VOLTAGE REGULATOR | GTM 勤益投资控股 | ||
GQ2131 | C M O S P o s i t i v e Vo l t a g e R e g u l a t o r 文件:422.52 Kbytes Page:5 Pages | ETL 亚历电子 | ||
TV VERTICAL OUTPUT CIRCUIT TV VERTICAL OUTPUT CIRCUIT The KA2131 is a monolithic integrated circuit designed for the vertical output stage in color television receivers. FUNCTIONS • Driver stage. • Output stage. • Flyback generators. • Pulse shapers. | SAMSUNG 三星 | |||
3 HIGH SIDE & 3 LOW SIDE DRIVER 3-HIGH SIDE & 3-LOW SIDE DRIVER The MPIC2131 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | MOTOROLA 摩托罗拉 | |||
3 HIGH SIDE & 3 LOW SIDE DRIVER 3-HIGH SIDE & 3-LOW SIDE DRIVER The MPIC2131 is a high voltage, high speed, power MOSFET and IGBT driver with three independent high side and low side referenced output channels for 3–Phase applications. Proprietary HVIC technology enables ruggedized monolithic construction. Logic inputs are | MOTOROLA 摩托罗拉 | |||
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER Product Description The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum s | RFMD 威讯联合 | |||
HIGH EFFICIENCY AMPS/ETACS AMPLIFIER Product Description The RF2131 is a high-power, high-efficiency amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in AMPS and ETACS handheld equipment, spread spectrum s | RFMD 威讯联合 |
GQ2131产品属性
- 类型
描述
- 型号
GQ2131
- 制造商
GTM
- 制造商全称
GTM
- 功能描述
CMOS POSITIVE VOLTAGE REGULATOR
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DdatasheetPDF页码索引
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