型号 功能描述 生产厂家 企业 LOGO 操作

N-Channel 100-V (D-S) MOSFET

FEATURES TrenchFET® • Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 44A, RDS(ON) = 39mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 44A, RDS(ON) = 39mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead free product is acquired.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

CET

华瑞

TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

TMOS E−FET Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fas

Motorola

摩托罗拉

更新时间:2025-10-18 22:50:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
NA
20000
全新原装假一赔十
ON
NEW
TO-247
6893
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
MOT
25+23+
TO247
13767
绝对原装正品全新进口深圳现货
MOT
28
公司优势库存 热卖中!!
MOTOROLA
25+
TO-3P
18000
原厂直接发货进口原装
ON
24+
TO-247
4500
郑重承诺只做原装进口现货
MOT
24+
N/A
6820
ONSEMI/安森美
25+
NA
860000
明嘉莱只做原装正品现货
MOT
23+
TO247
8000
只做原装现货

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