N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

N-Channel100-V(D-S)MOSFET

FEATURES TrenchFET®•PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100%RgTested APPLICATIONS •IsolatedDC/DCConverters

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,44A,RDS(ON)=39mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,44A,RDS(ON)=39mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

TMOSPOWERFET45AMPERES100VOLTSRDS(on)=0.035OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafas