| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GPK2333 | P-Channel MOSFET | GREENPOWER 格瑞宝 |   | |
High Speed Switching Application High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Load | FAIRCHILD 仙童半导体 | | ||
Silicon NPN Power Transistor for Switching Power Applications Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE | NTE | | ||
GENERAL PURPOSE AMPLIFIER Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica | RFMD 威讯联合 | | ||
GENERAL PURPOSE AMPLIFIER Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica | RFMD 威讯联合 | | ||
丝印代码：E3***；P-Channel 12-V (D-S) MOSFET 文件：243.12 Kbytes Page：3 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |
GPK2333产品属性
- 类型
描述
- VDS(V)：
-12
- VGS(V)：
±8
- ID(A)：
-6
- VTH(V)_MIN：
-0.4
- VTH(V)_TYP：
-0.65
- VTH(V)_Max：
-1
- RDS(ON)(mΩ)_VGS=4.5V_Typ：
19
- RDS(ON)(mΩ)_VGS=4.5V_MAX：
25
- RDS(ON)(mΩ)_VGS=2.5V_Typ：
27
- RDS(ON)(mΩ)_VGS=2.5V_MAX：
37
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2019-3-13
DdatasheetPDF页码索引
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