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GN1721

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GNSEMIC

旌芯

EPAD??MICROPOWER OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1721E is a monolithic rail-to-rail precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1721E operational amplifier is a direct replacement of the ALD1701 operationa

ALD

Thermal Head-Use, 8-Channel, Transistor Array???

Overview The LB1721M is an 8-channel transistor array that has a low output saturation voltage and can be driven by a CMOS IC. It is especially suited for use in thermal head, LED drive applications. Features • Common-emitter 8-channel transistor array. • Low output saturation voltage. • On-c

SANYO

三洋

Integrated Circuit Pulse Width Modulator (PWM) Regulator

Description: The NTE1721 and NTE1723 are pulse width modulator control–circuits designed to offer improved performance and lowered external parts count when implemented for controlling all types of switching power supplies. The no–chip +5.1V reference is trimmed to ±1 and the input common–mode

NTE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 14.0 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A)

NEC

瑞萨

GN1721产品属性

  • 类型

    描述

  • 段位:

    32X4

  • 驱动点阵:

    128

  • 按键:

    6X4

  • 电压:

    2.5-5.5

  • 产品特点:

    内置振荡器

  • 封装:

    SSOP48

更新时间:2026-5-23 14:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GN(旌芯)
24+
con
10000
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