10/11.3 Gb/s SFP+应用的自动增益控制的跨阻放大器

·Single +3.3V power supply\n·Power dissipation 190mW (typical)\n·Bandwidth remains constant over dynamic range\n·Typical small signal gain of 4 kΩ\n·RSSI (Receive Signal Strength Indicator)\n·Operates from 9.95Gb/s to 11.3 Gb/s NRZ;

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Dual JFET Input Precision High Speed Op Amp?

文件：175.73 Kbytes Page：3 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages

Dual and Quad, JFET Input Precision High Speed Op Amps

文件：869.85 Kbytes Page：12 Pages