10/11.3 Gb/s分层调整限制跨阻放大器

·Single +3.3 V power supply\n·Power dissipation = 145 mW (typical)\n·Transimpedance gain = 4 kΩ into 100Ω load (diff)\n·Upper Bandwidth (-3dB) = 12GHz\n·Operates at OC-192 / STM-64 up to 11.3 Gb/s NRZ rates\n·RSSI (Receive Signal Strength Indicator)\n·User adjustable Input Slicing Level.\n·Can be us;

Integrated Circuit FM/AM IF Amp

Integrated Circuit FM/AM IF Amp

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages