NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO=120V * 3 Amp continuous Current * 6 Amp pulse Current * Very Low Saturation Voltage APPLICATIONS * Automotive Switching Circuit * Audio Driver Stages

封装/外壳：E-Line-3 包装：管件 描述：TRANS NPN 120V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS NPN 120V 3A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Integrated Circuit FM/AM IF Amp

Integrated Circuit FM/AM IF Amp

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel

Ka Band 2 Watt Power Amplifier

Key Features and Performance • 0.25 um pHEMT Technology • 20 dB Nominal Gain • 2W Nominal Pout • -30 dBc IMR3 @ 26 dBm SCL • Bias 7V @ 1.4 A • Chip Dimensions 5.89 mm x 3.66 mm Primary Applications • LMDS • Point-to-Point Radio • Satellite Ground Terminal Rel