Excellent HFE Linearity HFE : HFE(0.1mA)/ HFE(2mA)=0.95(Typ.)

■ FEATRUES NPN General Purpose Transistor

General Purpose Disc Ceramic Capacitors

General Purpose Disc Ceramic Capacitors ■ General Purpose ■ Ideal For Use in Non-critical Coupling, Bypass and Filter Applications ■ Conformally Coated ■ Radial Leads GENERAL SPECIFICATIONS Temperature Range: -30°C to +85°C Voltage Range: 50, 100, 500, 1,000, 2,000, 3,000 WVDC Cap

Disc Ceramic Capacitors

-General Purpose -Ideal For Use in Non-critical Coupling, Bypass and Filter Applications -Conformally Coated -Radial Leads

NPN General Purpose Transistor

NPN General Purpose Transistor

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VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,