| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED |   | ||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CREE |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
CREE(科锐) |
24+ |
N/A |
37048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
Cree |
25+23+ |
BGA |
19488 |
绝对原装正品全新进口深圳现货 |
|||
CREE |
24+ |
N/A |
11000 |
原装正品 有挂有货 假一赔十 |
|||
CREE |
三年内 |
1983 |
只做原装正品 |
||||
CREE |
638 |
原装正品 |
|||||
CREE/科锐 |
2447 |
20 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
CREE |
24+ |
SMD |
500 |
“芯达集团”专营军工百分之百原装进口 |
|||
MACOM |
25+ |
5000 |
原装军类可排单 |
GH40120F规格书下载地址
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2019-9-6
DdatasheetPDF页码索引
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