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型号 功能描述 生产厂家 企业 LOGO 操作
GFC9130

P Channel Power MOSFET

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GSG

劲力半导体

GFC9130

P Channel Power MOSFET

GSG

劲力半导体

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SAMSUNG

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

SAMSUNG

三星

TC9130P 4CH INDEPENDENT CYCLIC TYPE TOUCH SWITCH

TOSHIBA

东芝

P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件:20.72 Kbytes Page:2 Pages

SEME-LAB

P-CHANNEL POWER MOSFET

文件:16.9 Kbytes Page:2 Pages

SEME-LAB

GFC9130产品属性

  • 类型

    描述

  • 型号

    GFC9130

  • 制造商

    GSG

  • 制造商全称

    GSG

  • 功能描述

    P Channel Power MOSFET

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