N Channel Power MOSFET with extremely low RDS(on)

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N Channel Power MOSFET with extremely low RDS(on)

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=70A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ● Dynamic dv/dt Rating ● Isolated Central Mounting Hole ● 175°C Operating Temperature ● Ease

Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

On-Screen-Display Controller for CRT/LCD Monitor

[MYSON TECHNOLOGY] GENERAL DESCRIPTION MTV048 is designed for monitor applications to display built-in fonts onto monitor screens. The display operation occurs by transferring data and controls information from the micro controller to RAM through a serial data interface. It can execute a ful

Three Phase Half Controlled Rectifier Bridge, B6HK

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The THNCFxxxMBA/BAI series CompactFlash card is a flash technology based with ATA interface flash memory card.

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