GD15晶体管资料

  • GD150别名:GD150三极管、GD150晶体管、GD150晶体三极管

  • GD150生产厂家:德国VEB联合企业

  • GD150制作材料:Ge-PNP

  • GD150性质:低频或音频放大 (LF)_功率放大 (L)

  • GD150封装形式:直插封装

  • GD150极限工作电压:20V

  • GD150最大电流允许值:3A

  • GD150最大工作频率:<1MHZ或未知

  • GD150引脚数:2

  • GD150最大耗散功率:5.3W

  • GD150放大倍数

  • GD150图片代号:E-44

  • GD150vtest:20

  • GD150htest:999900

  • GD150atest:3

  • GD150wtest:5.3

  • GD150代换 GD150用什么型号代替:AD162,AD262,3AD50A,

型号 功能描述 生产厂家 企业 LOGO 操作
GD15

Microwave SLCs

文件:107.28 Kbytes Page:1 Pages

AVX

GD15

Microwave SLCs ULTRA MAXI Series

文件:105.53 Kbytes Page:1 Pages

AVX

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-packag

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as welding machine and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

650V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses  Rugged w

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capabili

STARPOWER

斯达半导体

1200V/150A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capabili

STARPOWER

斯达半导体

1200V/150A 4 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

650V/150A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capability  V

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/150A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/15A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/15A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/15A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/15A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V IGBT模块

STARPOWER

斯达半导体

1200V IGBT模块

STARPOWER

斯达半导体

1700V IGBT模块

STARPOWER

斯达半导体

包装:散装 描述:DC/DC CONVERTER 2X15V 电源 - 外部/内部(板外) 直流转换器

VICOR

包装:散装 描述:DC/DC CONVERTER 2X15V 电源 - 外部/内部(板外) 直流转换器

VICOR

GD15产品属性

  • 类型

    描述

  • 型号

    GD15

  • 制造商

    AVX

  • 制造商全称

    AVX Corporation

  • 功能描述

    Microwave SLCs ULTRA MAXI Series

更新时间:2026-3-1 21:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STARPOWER
25+23+
MODULE
35058
绝对原装正品全新进口深圳现货
GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二极管原厂正品全系列现货
STARPOWER
19+
MODULE
500
原装现货支持BOM配单服务
嘉兴斯达
23+
STOCK
10000
原装现货订货渠道
STARPOWER/嘉兴斯达
25+
MODULE
880000
明嘉莱只做原装正品现货
GIGA
24+
QFP
65
STARPOWER
17+
IGBT
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
GWANGDATC
2450+
1260SMD
9850
只做原装正品现货或订货假一赔十!
STAR
2406+
IGBT
11260
诚信经营!进口原装!量大价优!
GWANGDATC
24+
1260SMD
5000
全新原装正品,现货销售

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