| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GD10 | Microwave SLCs 文件:107.28 Kbytes Page:1 Pages | AVX | ||
GD10 | Microwave SLCs ULTRA MAXI Series 文件:105.53 Kbytes Page:1 Pages | AVX | ||
GD10 | Microwave SLCs ULTRA MAXI Series | KYOCERA AVX | ||
丝印代码:GD10NC60HD;600 V - 10 A - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov | STMICROELECTRONICS 意法半导体 | |||
丝印代码:GD10NC60KD;10 A, 600 V short-circuit rugged IGBT Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features Lowe | STMICROELECTRONICS 意法半导体 | |||
丝印代码:GD10NC60SD;10 A, 600 V fast IGBT 文件:1.07434 Mbytes Page:16 Pages | STMICROELECTRONICS 意法半导体 | |||
丝印代码:GD10NC60S;10 A, 600 V fast IGBT 文件:1.27233 Mbytes Page:18 Pages | STMICROELECTRONICS 意法半导体 | |||
1200V/1000A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Short circuit capability VCE(sat) with posit | STARPOWER 斯达半导体 | |||
1200V/1000A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Short circuit capability VCE(sat) with posit | STARPOWER 斯达半导体 | |||
1700V IGBT模块 额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: L Low Loss and Fast IGBT; | STARPOWER 斯达半导体 | |||
1700V IGBT模块 额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: T Trench IGBT Medium Power; | STARPOWER 斯达半导体 | |||
1700V/1000A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with positive temperat | STARPOWER 斯达半导体 | |||
750V/1000A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features Low VCE(sat) Trench IGBT technology Low switching losses 6μs short circuit capab | STARPOWER 斯达半导体 | |||
1200V/100A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A chopper in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positive temperature coefficient | STARPOWER 斯达半导体 | |||
1200V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positive temperature coefficient Low switching loss | STARPOWER 斯达半导体 | |||
1200V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS. Features Low VCE(sat) Trench IGBT technology VCE(sat) with positive temperature coefficient Low switching loss | STARPOWER 斯达半导体 | |||
1200V/100A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VC | STARPOWER 斯达半导体 | |||
1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features NPT IGBT technology 10μs short circuit capability Low switching losses | STARPOWER 斯达半导体 | |||
1700V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1700V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss 10μs short circuit capabili | STARPOWER 斯达半导体 | |||
1200V/100A 4 in one-package General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features NPT IGBT technology 10μs short circuit capability Low switching losses | STARPOWER 斯达半导体 | |||
650V/100A 3-level in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with positive | STARPOWER 斯达半导体 | |||
1200V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/100A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/10A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss 6μs short circuit capabilit | STARPOWER 斯达半导体 | |||
650V/10A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology Low switching loss 6μs short circuit capabilit | STARPOWER 斯达半导体 | |||
GD10GS-SP1M Ubiquiti Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (1m, Passive) Features ATGBICS GD10GS-SP1M compatible 10GBase-CU SFP+ to SFP+ direct attach cable operates over passive copper with a cable length of 1m. It is suitable for short reach connection between two SFP+ ports in 10G interconnecting networking applications. Our product meets the specification of Ubi | ATGBICS | |||
1200V 10A SiC Schottky MPS™ Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC *VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedne | GENESIC | |||
600 V - 10 A - very fast IGBT Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov | STMICROELECTRONICS 意法半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 8μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
650V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 10μs short circuit capability VCE(sat) with po | STARPOWER 斯达半导体 | |||
650V/10A in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6μs short circuit capability VCE(sat) with pos | STARPOWER 斯达半导体 |
GD10产品属性
- 类型
描述
- Forward Current:
10
- Package:
TO-220-2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
|||
STARPOWER |
25+23+ |
MODULE |
34830 |
绝对原装正品全新进口深圳现货 |
|||
GLANDTE |
24+ |
SSOP24 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
斯达 |
19+ |
MOMUDE |
200 |
原装现货支持BOM配单服务 |
|||
嘉兴斯达 |
23+ |
STOCK |
10000 |
原装现货订货渠道 |
|||
STAR |
2406+ |
IGBT |
11260 |
诚信经营!进口原装!量大价优! |
|||
MOTOROLA/摩托罗拉 |
25+ |
DIP16 |
67 |
全新原装正品支持含税 |
|||
原装STARPOWER |
19+ |
IGBT |
20000 |
||||
UNEO |
2447 |
- |
115000 |
1个/袋一级代理专营品牌!原装正品,优势现货,长期排 |
|||
JINGDAO/晶导微 |
23+ |
TO-263 |
2500 |
原装现货 |
GD10芯片相关品牌
GD10规格书下载地址
GD10参数引脚图相关
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GD10数据表相关新闻
GD CSSRML.14-U8V1-24-1
GD CSSRML.14-U8V1-24-1
2022-12-16GCM31CR71H225KA55L
GCM31CR71H225KA55L
2022-10-24GD25MPS17H
原装代理
2022-9-1GCM32E5C2J273FX03L
GCM32E5C2J273FX03L
2022-8-10GD25Q128EWIGR
GD25Q128EWIGR
2022-6-9GD25LQ128CWIG WSON-8 GD/兆易创新 全新原装正品 品质保证
原装正品现货供应 0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-4-14
DdatasheetPDF页码索引
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