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GD10

Microwave SLCs

文件:107.28 Kbytes Page:1 Pages

AVX

GD10

Microwave SLCs ULTRA MAXI Series

文件:105.53 Kbytes Page:1 Pages

AVX

GD10

Microwave SLCs ULTRA MAXI Series

KYOCERA AVX

丝印代码:GD10NC60HD;600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

STMICROELECTRONICS

意法半导体

丝印代码:GD10NC60KD;10 A, 600 V short-circuit rugged IGBT

Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications. Features  Lowe

STMICROELECTRONICS

意法半导体

丝印代码:GD10NC60SD;10 A, 600 V fast IGBT

文件:1.07434 Mbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

丝印代码:GD10NC60S;10 A, 600 V fast IGBT

文件:1.27233 Mbytes Page:18 Pages

STMICROELECTRONICS

意法半导体

1200V/1000A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Short circuit capability  VCE(sat) with posit

STARPOWER

斯达半导体

1200V/1000A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Short circuit capability  VCE(sat) with posit

STARPOWER

斯达半导体

1700V IGBT模块

额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: L Low Loss and Fast IGBT;

STARPOWER

斯达半导体

1700V IGBT模块

额定电压: 1700V\n额定电流: 1000A\n电路结构: Half Bridge\n芯片系列: T Trench IGBT Medium Power;

STARPOWER

斯达半导体

1700V/1000A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with positive temperat

STARPOWER

斯达半导体

750V/1000A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle. Features  Low VCE(sat) Trench IGBT technology  Low switching losses  6μs short circuit capab

STARPOWER

斯达半导体

1200V/100A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A chopper in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient 

STARPOWER

斯达半导体

1200V/100A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Low switching loss 

STARPOWER

斯达半导体

1200V/100A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS. Features  Low VCE(sat) Trench IGBT technology  VCE(sat) with positive temperature coefficient  Low switching loss 

STARPOWER

斯达半导体

1200V/100A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VC

STARPOWER

斯达半导体

1200V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

1700V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1700V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A 2 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  10μs short circuit capabili

STARPOWER

斯达半导体

1200V/100A 4 in one-package

General Description STARPOWER IGBT Power Module provides ultrafast switching speed as well as short circuit ruggedness. It’s designed for the applications such as electronic welder and inductive heating. Features  NPT IGBT technology  10μs short circuit capability  Low switching losses

STARPOWER

斯达半导体

650V/100A 3-level in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with positive

STARPOWER

斯达半导体

1200V/100A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/100A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/100A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/100A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/100A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/10A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capabilit

STARPOWER

斯达半导体

650V/10A 6 in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  6μs short circuit capabilit

STARPOWER

斯达半导体

GD10GS-SP1M Ubiquiti Compatible Direct Attach Copper Twinax Cable 10G SFP Cu (1m, Passive)

Features ATGBICS GD10GS-SP1M compatible 10GBase-CU SFP+ to SFP+ direct attach cable operates over passive copper with a cable length of 1m. It is suitable for short reach connection between two SFP+ ports in 10G interconnecting networking applications.  Our product meets the specification of Ubi

ATGBICS

1200V 10A SiC Schottky MPS™ Diode

Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC *VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedne

GENESIC

600 V - 10 A - very fast IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low on-voltage drop (VCE(sat)) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recov

STMICROELECTRONICS

意法半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  8μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

650V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

1200V/10A PIM in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  VCE(sat) with po

STARPOWER

斯达半导体

650V/10A in one-package

General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  6μs short circuit capability  VCE(sat) with pos

STARPOWER

斯达半导体

GD10产品属性

  • 类型

    描述

  • Forward Current:

    10

  • Package:

    TO-220-2

更新时间:2026-5-24 22:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
GeneSiC Semiconductor
24+
DO/TO
986
碳化硅二极管原厂正品全系列现货
STARPOWER
25+23+
MODULE
34830
绝对原装正品全新进口深圳现货
GLANDTE
24+
SSOP24
7850
只做原装正品现货或订货假一赔十!
斯达
19+
MOMUDE
200
原装现货支持BOM配单服务
嘉兴斯达
23+
STOCK
10000
原装现货订货渠道
STAR
2406+
IGBT
11260
诚信经营!进口原装!量大价优!
MOTOROLA/摩托罗拉
25+
DIP16
67
全新原装正品支持含税
原装STARPOWER
19+
IGBT
20000
UNEO
2447
-
115000
1个/袋一级代理专营品牌!原装正品,优势现货,长期排
JINGDAO/晶导微
23+
TO-263
2500
原装现货

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