Description

This IGBT utilizes the advanced PowerMESH™

process resulting in an excellent trade-off

between switching performance and low on-state

behavior.

Features

■ Low on-voltage drop (VCE(sat))

■ Low CRES / CIES ratio (no cross-conduction

susceptibility)

■ Very soft ultra fast recovery antiparallel diode

Applications

■ High frequency motor controls

■ SMPS and PFC in both hard switch and

resonant topologies

■ Motor drivers